Developing Microcontroller Architectures
Platform Software Solutions (Symbian/Java and Microsoft CE) is developing in parallel with microcontroller architectures. The aim is to deliver better real-time performance by improving memory management (hardware and software optimization) and by supporting more flexible pipelining and multitasking. ARM 7 was a success in the late 1990s because it took GSMs 100,000 lines of source code and made it run about six times faster than the existing 8-bit microcontrollers being used. A similar change in architecture will be needed, arguably, to support the highly asynchronous multitasking requirements implicit in managing and multiplexing complex multimedia (multiple per-user traffic streams). We are beginning to see similar changes in DSP architecture (for example, the Siroyan example used in Chapter 5, on handset hardware) and in memory architecture. Software has an insatiable appetite for memory, and access delay is becoming an increasingly important part of the delay budget. If you were to dissect a typical Random Access Memory, you would find almost 60 percent of the die area and 90 percent of the transistor count dedicated to memory access aids. Memory manufacturers are beginning to include (yes, you have guessed already) integrated microprocessors— sometimes known as Intelligent RAM, or IRAM). This means that: If you are a microcontroller manufacturer, you add DSP functionality and memory to your product. If you are a DSP manufacturer, you add microcontroller and memory functionality to your product. If you are a memory manufacturer, you add DSP and a microcontroller to your product. The software then struggles to adapt to these changing hardware form factors. Access times are, of course, also a function of operating voltage. Flash memory access times might vary between 70 and 100 ns depending on whether the device is running at 1.8 or 2-5 V. High-speed (very power hungry) S-RAM can reduce access delay to between 3 and 8 ns. A5-Volt flash memory might deliver 100 ns of access delay running at 5 V, which could increase to 200 ns if reduced to 3 V. 224
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